• DocumentCode
    905885
  • Title

    Spin Interaction Effect on Potentiometric Measurements in a Quantum Well Channel

  • Author

    Park, Youn Ho ; Koo, Hyun Cheol ; Kim, Kyung Ho ; Kim, Hyung-jun ; Han, Suk-hee

  • Author_Institution
    Center for Spintronics Res., Korea Inst. of Sci. & Technol., Seoul
  • Volume
    45
  • Issue
    6
  • fYear
    2009
  • fDate
    6/1/2009 12:00:00 AM
  • Firstpage
    2389
  • Lastpage
    2392
  • Abstract
    Spin-orbit interaction induced magnetic field, which can arise from an asymmetry of the potential well, causes imbalance of carrier densities between spin-up and spin-down electrons. In the potentiometric measurement, the detected signal follows the magnetization status of the detection ferromagnet (FM1). In case of adding the neighboring ferromagnet (FM2), the measured potential is decided by both of FMs. When the magnitude of external field is between the coercive field of the FM1 and FM2, the detector reads the intermediate potential. The detector interacts with the neighboring ferromagnet and shows four levels of potential states.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier density; coercive force; ferromagnetic materials; field effect transistors; gallium arsenide; indium compounds; magnetic fields; magnetisation; semiconductor quantum wells; spin polarised transport; spin-orbit interactions; In0.53Ga0.47As; Rashba effect; carrier densities; ferromagnet; magnetization; potentiometric measurements; quantum well channel; spin interaction effect; spin-FET; spin-down electrons; spin-orbit interaction induced magnetic field; spin-up electrons; Potentiometric measurement; Rashba effect; quantum wells; spin-orbit interaction;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2009.2018584
  • Filename
    4957714