• DocumentCode
    907426
  • Title

    Metal problems in plastic encapsulated integrated circuits

  • Author

    Metz, E.D.

  • Author_Institution
    Motorola, Inc., Phoenix, Ariz.
  • Volume
    57
  • Issue
    9
  • fYear
    1969
  • Firstpage
    1606
  • Lastpage
    1609
  • Abstract
    The long-term reliability of plastic encapsulated integrated circuits in humid environments is ultimately limited by the effects of entering moisture. Degradation of device characteristics may be acceptable in some types of circuits, but catastrophic failures ("opens" and "shorts") are certainly not acceptable. Catastrophic failures can occur in a) the metalization used on the silicon chip itself, b) the internal wires, beam leads or frames, and c) the interfaces between these parts (and others) used in making a complete package. Entry of moisture permits electrochemical corrosion or deplating and replating of metals. This occurs under operating conditions, accelerated by externally applied potentials, and also in the unoperated condition due to EMFs produced by couples between dissimilar metals or by built-in potentials of p-n junctions. Choice of metal systems, platings, and passivation geometries determine the useful life and modes of failure of plastic encapsulated integrated circuits exposed to moisture.
  • Keywords
    Acceleration; Corrosion; Coupling circuits; Degradation; Integrated circuit reliability; Moisture; Packaging; Plastics; Silicon; Wires;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1969.7343
  • Filename
    1449273