DocumentCode
907490
Title
Semiconductor raman laser
Author
Suto, K. ; Nishizawa, J.
Author_Institution
Tohoku University, Assistant Professor of the Research Institute of Electrical Communication, Sendai, Japan
Volume
132
Issue
1
fYear
1985
fDate
2/1/1985 12:00:00 AM
Firstpage
81
Lastpage
84
Abstract
The semiconductor Raman laser using the longitudinal optical phonon mode of GaP has a very low threshold value of optical input power. To reduce the threshold optical input power and power density further, a crystal as thin as 160 ¿¿m with a wave-guiding structure is used. Epitaxial layers of GaP with a thickness of 280 ¿¿m are demonstrated as the low-threshold semiconductor Raman laser, for which the threshold input power density is as low as 1.7 ¿¿ 106 W/cm2.
Keywords
III-V semiconductors; Raman lasers; gallium compounds; lattice phonons; GaP; III-V semiconductor; epitaxial layers; longitudinal optical phonon mode; low-threshold semiconductor Raman laser; optical input power; power density; semiconductor Raman laser; threshold value; waveguiding structure;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
DOI
10.1049/ip-j.1985.0016
Filename
4643866
Link To Document