• DocumentCode
    907920
  • Title

    Intensity distribution of semiconductor laser emission due to the excitation of satellite modes

  • Author

    Schimpe, R.

  • Author_Institution
    Technische Universit¿¿t M¿¿nchen, Lehrstuhl f¿¿r Allgemeine Elektronik, M¿¿nchen, West Germany
  • Volume
    132
  • Issue
    2
  • fYear
    1985
  • fDate
    4/1/1985 12:00:00 AM
  • Firstpage
    146
  • Lastpage
    149
  • Abstract
    The fluctuations of the lasing mode intensity due to weakly excited satellite modes are discussed, in terms of the probability distribution, for a semiconductor laser with homogeneous gain saturation. The dependence of the intensity distribution on the injection rate and on the gain spectrum shift is investigated.
  • Keywords
    electron device noise; laser modes; semiconductor junction lasers; gain spectrum shift dependence; homogeneous gain saturation; injection rate dependence; intensity distribution; lasing mode intensity fluctuations; noise characteristics; probability distribution; semiconductor laser emission; weakly excited satellite modes;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • DOI
    10.1049/ip-j.1985.0029
  • Filename
    4643909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=907920