DocumentCode
908259
Title
MNOS load device
Author
Lin, H.C. ; Varker, C.J.
Volume
57
Issue
10
fYear
1969
Firstpage
1793
Lastpage
1795
Abstract
Metal-nitride-oxide-semiconductor (MNOS) field-effect transistors can be changed from enhancement mode to depletion mode after the application of polarizing voltage. When such a polarized MNOS device is used as a load in a switching circuit, the supply voltage and the rise time are reduced.
Keywords
Delay; Equations; FETs; MOSFETs; Nonvolatile memory; Polarization; Switching circuits; Threshold voltage; Transfer functions; Transient response;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1969.7417
Filename
1449347
Link To Document