DocumentCode
908666
Title
Far-Infrared Properties of Interacting Donors in Antimony -Doped Germanium
Author
Yoshihiro, Kazuo ; Tokumoto, Madoka ; Yamanouchi, Chikako
Volume
22
Issue
12
fYear
1974
fDate
12/1/1974 12:00:00 AM
Firstpage
1072
Lastpage
1076
Abstract
Absorption and photoconductivity of 337-mu m radiation in Sb-doped Ge with excess donor concentrations ranging from 1.2 x 1016 to 3.6 x 1017 cm-3 have been investigated at liquid-He temperatures. The result suggests the existence of a "delocalized" excited state between the conduction band and the donor ground state which arises from the overlapping of donor wave functions.
Keywords
Antiferromagnetic materials; Germanium; Infrared spectra; Neodymium; Nickel; Notice of Violation; Paramagnetic resonance; Semiconductor impurities; Stationary state; Wave functions;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1974.1128432
Filename
1128432
Link To Document