Highly rectifying Au-contacts on diamond-on-silicon substrate

Author

Gluche, P. ; Wolter, S.D. ; Borst, T.H. ; Ebert, W. ; Vescan, A. ; Kohn, E.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

Volume

17

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

270

Lastpage

272

Abstract

Au Schottky diodes have been fabricated on highly oriented diamond (HOD) films, grown on silicon using AC-bias nucleation and microwave plasma chemical vapor deposition. The active layers were selectively grown and doped by solid boron source. High rectification ratios were obtained up to 500/spl deg/C in a bias voltage range up to /spl plusmn/15 V. A current density of more than 1 A/cm/sup 2/ and a breakdown field strength up to 2.0/spl middot/10/sup 6/ V/cm for point contacts has been demonstrated.

Keywords

Schottky diodes; current density; diamond; electric breakdown; elemental semiconductors; gold; point contacts; rectification; semiconductor device metallisation; semiconductor-metal boundaries; silicon; solid-state rectifiers; substrates; wide band gap semiconductors; -15 to 15 V; 500 C; AC-bias nucleation; Au-C:B-C-Si; C; Schottky diodes; breakdown field strength; chemical vapor deposition; current density; diamond-on-silicon substrate; highly oriented diamond films; highly rectifying Au contacts; microwave plasma CVD; point contacts; rectification ratios; selectively grown active layers; solid B dopant source; Breakdown voltage; Chemical vapor deposition; Gold; Plasma chemistry; Plasma density; Plasma sources; Schottky diodes; Semiconductor films; Silicon; Solids;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.496454

Filename

496454