Lateral insulated gate p-i-n transistor (LIGPT)-a new MOS gate lateral power device

Author

Huang, Alex Q.

Author_Institution

Power Electron. Center, Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

Volume

17

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

297

Lastpage

299

Abstract

A new insulated gate power device suitable for thin silicon-on-insulator (SOI) application is described and verified through two-dimensional numerical simulation. The lateral insulated gate p-i-n transistor (LIGPT) has a much superior current carrying capability than that of the lateral insulated gate bipolar transistor (LIGBT) because it conducts like a p-i-n diode. Because a new turn-off mechanism is employed, the LIGPT also demonstrates a very large gate turn-off capability. These two major advantages; coupled with other advantages such as latch-up free, make the LIGPT a very promising device for use in power integrated circuits on SOI.

Keywords

MIS devices; power field effect transistors; power integrated circuits; silicon-on-insulator; MOS gate lateral power device; current carrying capability; gate turnoff capability; insulated gate power device; lateral insulated gate p-i-n transistor; power integrated circuits; thin SOI application; turnoff mechanism; two-dimensional numerical simulation; Cathodes; Dielectric substrates; Insulated gate bipolar transistors; Insulation; MOSFETs; Numerical simulation; P-i-n diodes; PIN photodiodes; Silicon on insulator technology; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.496463

Filename

496463