Temperature-sensitivity analysis of 1360-nm dilute-nitride quantum-well lasers

Author

Yeh, Jeng-Ya ; Tansu, Nelson ; Mawst, Luke J.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI, USA

Volume

16

Issue

3

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

741

Lastpage

743

Abstract

The N-content of an InGaAsN quantum-well (QW) laser is found to dramatically affect the temperature sensitivity of the current injection efficiency (η_inj) and material gain parameter (g_oJ). The increased temperature sensitivity of η_inj and g_oJ of InGaAsN QW lasers with increasing N-content leads to a significant increase in their temperature sensitivity of threshold current and external differential quantum efficiency. Increasing the N-content of the InGaAsN QW potentially results in a reduction of the heavy hole confinement, which may account for the increased temperature sensitivity of the current injection efficiency.

Keywords

III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; thermo-optical effects; 1360 nm; InGaAsN; InGaAsN quantum-well laser; current injection efficiency; dilute-nitride quantum-well lasers; external differential quantum efficiency; heavy hole confinement; temperature sensitivity; thermionic carrier leakage; threshold current; Chemical lasers; Chemical vapor deposition; Fiber lasers; MOCVD; Molecular beam epitaxial growth; Nitrogen; Optical materials; Quantum well lasers; Temperature sensors; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.823715

Filename

1269780