Nitride-based LEDs with textured side walls

Author

Chang, C.S. ; Chang, S.J. ; Su, Y.K. ; Lee, C.T. ; Lin, Y.C. ; Lai, W.C. ; Shei, S.C. ; Ke, J.C. ; Lo, H.M.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taiwan, Taiwan

Volume

16

Issue

3

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

750

Lastpage

752

Abstract

Nitride-based light-emitting diodes (LEDs) with textured side walls were fabricated. By using plasma-enhanced chemical vapor deposition SiO₂ layer as the etching mask, we successfully etched the nitride epitaxial layers to achieve wavelike side walls. It was found that such wavelike side walls could mainly enhance the light output at the horizontal directions. With a 20-mA current injection, it was found that the output powers of the LED with textured side walls and normal LED were 9.3 and 8.4 mW, respectively. Furthermore, it was found that such textured side walls will not result in a higher operation voltage.

Keywords

indium compounds; light emitting diodes; optical fabrication; plasma CVD; semiconductor epitaxial layers; ITO; InSnO; SiO₂ layer; current injection; etching mask; nitride epitaxial layers; nitride-based LED; nitride-based light-emitting diodes; plasma-enhanced chemical vapor deposition; textured side walls; wavelike side walls; Chemical vapor deposition; Epitaxial layers; Etching; Gallium nitride; Light emitting diodes; Plasma applications; Plasma chemistry; Plasma waves; Quantum well devices; Refractive index;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.823768

Filename

1269783