• DocumentCode
    909782
  • Title

    Field-emission-controlled transit-time negative resistance

  • Author

    Claassen, M. ; Harth, W.

  • Author_Institution
    Technische Universitÿt Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
  • Volume
    6
  • Issue
    16
  • fYear
    1970
  • Firstpage
    512
  • Lastpage
    513
  • Abstract
    Field emission from a Schottky contact on an n+¿n¿n++ semiconductor is proposed for carrier injection into a space-charge region to produce a negative transit-time resistance in the microwave range. Field-emission transit-time diodes are considered to behave linearly up to amplitude saturation, to exhibit low-noise performance, and to be capable of very high frequencies (1010¿1012 Hz).
  • Keywords
    semiconductor diodes; transit time devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19700356
  • Filename
    4234855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=909782