• DocumentCode
    909799
  • Title

    Poly-Silicon Based Latching RF MEMS Switch

  • Author

    Nordquist, Christopher D. ; Baker, Michael S. ; Kraus, Garth M. ; Czaplewski, David A. ; Patrizi, Gary A.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM
  • Volume
    19
  • Issue
    6
  • fYear
    2009
  • fDate
    6/1/2009 12:00:00 AM
  • Firstpage
    380
  • Lastpage
    382
  • Abstract
    A latching RF MEMS switch has been fabricated in a multi-user polysilicon surface micromachining process. The switch uses 5 V, 35 mA thermal actuation for < 500 mus to toggle between states and a compliant bistable latching mechanism to hold the state in the absence of applied bias. The switch, including probe pads, measures 1 mm2 and has <0.4 dB insertion loss, >25 dB return loss, and >75 dB isolation at 1 GHz. The switch has potential applications in low duty-cycle, low power RF tuning and switching applications.
  • Keywords
    circuit tuning; elemental semiconductors; low-power electronics; micromachining; microswitches; silicon; RF MEMS switch; Si; bistable latching mechanism; current 35 mA; frequency 1 GHz; insertion loss; low power RF tuning; polysilicon-based latching; return loss; surface micromachining process; switching application; voltage 5 V; Contacts; microelectromechanical devices; silicon; switches;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2009.2020025
  • Filename
    4967850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=909799