Pulsed ruby laser diffusion of tin into GaAs

Author

Kalkur, T.S. ; Nassibian, A.G. ; Rose, A.

Author_Institution

University of Colorado, Department of Electrical Engineering, Colorado Springs, USA

Volume

134

Issue

2

fYear

1987

fDate

4/1/1987 12:00:00 AM

Firstpage

71

Lastpage

74

Abstract

Spin-on tin silica films deposited on semi-insulating undoped GaAs were irradiated by a ruby laser at various incident energies. The resulting tin diffused layers, characterised by Hall effect measurements, show the formation of an n+ layer. The surfaces of the tin doped layers were observed in a scanning electron microscope and analysed in an electron microprobe. The concentration of tin in laser diffused and thermally diffused layers was compared by Rutherford backscattering measurements. Typical FET contact structures show higher breakdown voltages for laser diffused layers than for thermally diffused layers.

Keywords

Hall effect; III-V semiconductors; diffusion in solids; electron probe analysis; field effect transistors; gallium arsenide; laser beam applications; particle backscattering; scanning electron microscope examination of materials; semiconductor doping; tin; FET contact structures; GaAs-Sn-SiO2; GaAs:Sn; Hall effect measurements; III-V semiconductors; Rutherford backscattering measurements; breakdown voltages; electron microprobe; impurity concentration; interdiffusion; n+ layer formation; pulsed ruby laser diffusion; scanning electron microscope; semiconductor doping; semiinsulating undoped substrate;

fLanguage

English

Journal_Title

Solid-State and Electron Devices, IEE Proceedings I

Publisher

iet

ISSN

0143-7100

Type

jour

DOI

10.1049/ip-i-1.1987.0010

Filename

4644303