Electron cyclotron resonance hydrogen and nitrogen plasma surface passivation of AlGaAs/GaAs heterojunction bipolar transistors

Author

Wang, Q. ; Li, P.W. ; Osgood, Richard M., Jr. ; Wang, W.I. ; Yang, Edward S. ; Lu, Z.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

13

Issue

2

fYear

1992

Firstpage

83

Lastpage

85

Abstract

Electron cyclotron resonance (ECR) hydrogen (H) and nitrogen (N) plasma surface passivation on an AlGaAs/GaAs heterojunction bipolar transistor (HBT) is reported. As a result of the plasma processing, the base current ideality factor is improved from 2.67 to 1.96, and the maximum current gain is increased from 720 to 1000. In the low-current regime, the base current is reduced by two orders of magnitude. The nitride layer grown by nitrogen plasma passivates the GaAs surface and appears to be thermally stable without significant degradation.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; passivation; plasma deposition; AlGaAs-GaAs; GaAs surface; HBT; N plasma; base current ideality factor; electron cyclotron resonance H; heterojunction bipolar transistors; nitride layer; surface passivation; Cyclotrons; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; Nitrogen; Passivation; Plasma materials processing; Plasma stability; Resonance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144966

Filename

144966