• DocumentCode
    912015
  • Title

    MESFET-like transferred-electron devices in In0.53Ga0.47As

  • Author

    Hahn, David ; Zwinge, G. ; Schlachetzki, A.

  • Author_Institution
    Tech. Univ. Braunschweig, Germany
  • Volume
    29
  • Issue
    13
  • fYear
    1993
  • fDate
    6/24/1993 12:00:00 AM
  • Firstpage
    1160
  • Lastpage
    1162
  • Abstract
    In0.53Ga0.47As transferred-electron devices with Schottky-gate electrodes were fabricated. These devices can be used in optoelectronic circuits on InP or as millimetre wave oscillators. For the realisation of the gate electrode several enhancement layers were tested to increase the Schottky barrier height on In0.53Ga0.47As. The triggering of single dipole domains in the device was demonstrated.
  • Keywords
    Gunn devices; Schottky effect; gallium arsenide; indium compounds; integrated optoelectronics; solid-state microwave devices; In 0.53Ga 0.47As; InP; InP substrates; MESFET-like device; MM-wave device; Schottky barrier height; Schottky-gate electrodes; TED; millimetre wave oscillators; optoelectronic circuits; single dipole domains; transferred-electron devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930776
  • Filename
    219242
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912015