DocumentCode
912229
Title
On the deeply depleted MOS capacitor
Author
Prince, Jerry L. ; Wortman, J.J. ; Hauser, J.R.
Volume
58
Issue
5
fYear
1970
fDate
5/1/1970 12:00:00 AM
Firstpage
842
Lastpage
844
Abstract
It is shown that the length of that portion of the depleted region of a deeply depleted MOS capacitor which is active in generating carriers can be found by considering the effect of carrier concentrations on generation rate.
Keywords
Capacitance; Charge carrier lifetime; Charge carriers; Electrons; MOS capacitors; Neodymium; Radio access networks; Tin; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1970.7779
Filename
1449709
Link To Document