• DocumentCode
    912256
  • Title

    Infra-red sensitivity of bulk-barrier diodes due to lattice defects

  • Author

    Georgoulas, N.

  • Author_Institution
    Democritus University of Thrace, Laboratory of Electrotechnical and Electronic Materials Technology, Department of Electrical Engineering, School of Engineering, Xanthi, Greece
  • Volume
    134
  • Issue
    5
  • fYear
    1987
  • fDate
    10/1/1987 12:00:00 AM
  • Firstpage
    153
  • Lastpage
    155
  • Abstract
    Bulk-barrier diodes (BBDs) are majority carrier Si devices; their electrical characteristics can be adjusted by process design. Measurements of the quantum efficiency have been made in the wavelength range of 1.4¿2.0 ¿m. The infra-red sensitivity of a BBD in this region is explained by the excitation of carriers from deep traps produced by ion implantation.
  • Keywords
    elemental semiconductors; ion implantation; photodiodes; silicon; 1.4 to 2.0 micron; BBDs; Si; bulk-barrier diodes; deep traps; electrical characteristics; infra-red sensitivity; ion implantation; lattice defects; majority carrier; process design; quantum efficiency;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1987.0028
  • Filename
    4644363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912256