• DocumentCode
    912436
  • Title

    Q band GaAs Schottky-barrier IMPATT

  • Author

    Rodgers, J.M. ; Pomeroy, Robina C.

  • Author_Institution
    Royal Radar Establishment, Great Malvern, UK
  • Volume
    7
  • Issue
    1
  • fYear
    1971
  • Firstpage
    21
  • Abstract
    Microwave power at Q band is reported from GaAs Schottky-barrier avalanche diodes. A nickel-contacted epitaxial GaAs structure in a flipped mesa configuration was used. In a Q band waveguide cavity, 0.5 W was obtained at 26.7 GHz using a pulsed voltage source.
  • Keywords
    IMPATT devices; Schottky-barrier diodes; avalanche diodes; microwave oscillators; GaAs Schottky barrier avalanche diodes; IMPATT mode; operation at Q-band frequencies; peak power 0.5 W at 26.7 GHz;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710015
  • Filename
    4235119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912436