• DocumentCode
    912514
  • Title

    Energy Dependence of Proton-Induced Displacement Damage in Gallium Arsenide

  • Author

    Burke, E.A. ; Dale, C.J. ; Campbell, A.B. ; Summers, G.P. ; Stapor, W.J. ; Xapsos, M.A. ; Palmer, T. ; Zuleeg, R.

  • Author_Institution
    Mission Research Corporation 5434 Ruffin Road San Diego, CA 92123
  • Volume
    34
  • Issue
    6
  • fYear
    1987
  • Firstpage
    1220
  • Lastpage
    1226
  • Abstract
    Nonionizing energy deposition in gallium arsenide has been calculated for protons with energies ranging from 1 to 1000 MeV. The calculations are compared with new experimental results for ion implanted gallium arsenide resistors and Hall samples irradiated with protons in the energy range 1 to 60 MeV. Results are also compared with recent studies of proton induced displacement damage in silicon.
  • Keywords
    Conductivity; Electroencephalography; Energy loss; Gallium arsenide; Helium; Laboratories; Microelectronics; Protons; Resistors; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1987.4337456
  • Filename
    4337456
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=912514