DocumentCode
913116
Title
Carrier multiplication in the pinchoff region of m.o.s. transistors
Author
Martinot, H. ; Rossel, P.
Author_Institution
CRNS, Laboratoire d´Automatique et de ses Applications Spatiales, Toulouse, France
Volume
7
Issue
5
fYear
1971
Firstpage
118
Lastpage
120
Abstract
The letter describes a theoretical model for the abnormal current in the substrate of m.o.s. transistors beyond pinchoff. It is shown that this current is due to carrier multiplying by avalanching in the pinchoff region. The corresponding drain conductance is determined. The comparison between experimental and theoretical results is given for several samples.
Keywords
field effect transistors; metal-insulator-semiconductor devices; semiconductor device models; MOS transistors; carrier multiplication; pinch off region; semiconductor device modelling;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710078
Filename
4235186
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