• DocumentCode
    913206
  • Title

    Etched Schottky-barrier m.o.s.f.e.t.s using a single mask

  • Author

    Hogeboom, J.G. ; Cobbold, Richard S. C.

  • Author_Institution
    University of Toronto, Department of Electrical Engineering, Toronto, Canada
  • Volume
    7
  • Issue
    5
  • fYear
    1971
  • Firstpage
    133
  • Lastpage
    134
  • Abstract
    A simplified method for fabricating silicon m.o.s. transistors using a single photographic mask is described. The source and drain regions are etched; underetching the oxide results in autoregistration of the gate. The characteristics of both Schottky-barrier and p¿n junction source and drain devices are presented.
  • Keywords
    etching; field effect transistors; masks; metal-insulator-semiconductor devices; semiconductor device manufacture; MOSFET fabrication; Schottky barrier; etching; semiconductor device fabrication; single masks;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710086
  • Filename
    4235194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913206