Monolithic integrated wavelength duplexer-receiver on InP

Author

Bornholdt, Carsten ; Trommer, Dirk ; Unterbörsch, Günter ; Bach, Heinz-Gunter ; Venghaus, Herbert ; Weinert, Carl M.

Author_Institution

Heinrich-Hertz-Inst. fuer Nachrichtentechnik Berlin GmbH, Germany

Volume

11

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

408

Lastpage

415

Abstract

The monolithic integration of a detector stage comprising a photodiode and a field-effect transistor with a load resistor and a wavelength duplexer, realized in the GaInAsP/InP material system, is described. Design considerations, in particular for the wavelength duplexer, but for the complete chip as well, are reported, and details related to the realization of the device are given. Chips were mounted into housings and operated in a 1.3- mu m/1.55- mu m bidirectional transmission link. At 576 Mb/s and 10^-9 bit error rate, the sensitivity of the module is -21 dBm, the intrinsic sensitivity of the receiver is -28 dBm, and the gain-bandwidth product for the lowest noise bias conditions is 3.8 GHz.

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical receivers; photodiodes; 1.3 micron; 1.55 micron; 576 Mbit/s; GaInAsP-InP; bidirectional transmission link; bit error rate; detector stage; field-effect transistor; gain-bandwidth product; load resistor; monolithic integration; photodiode; receiver; semiconductor; sensitivity; wavelength duplexer-receiver; Bit error rate; Costs; Detectors; Directional couplers; FETs; Indium phosphide; Monolithic integrated circuits; Optical fiber communication; Optical receivers; Optoelectronic devices; Photodiodes; Resistors;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.219573

Filename

219573