• DocumentCode
    913608
  • Title

    Doping-dependent mobility analysis of junction field-effect transistors

  • Author

    Ramanan, K.V. ; Gupta, R.K.

  • Author_Institution
    Birla Institute of Technology and Science, Department of Electrical & Electronic Engineering, Pilani, India
  • Volume
    7
  • Issue
    9
  • fYear
    1971
  • Firstpage
    221
  • Lastpage
    224
  • Abstract
    An analysis of a junction field-effect transistor, taking into account the doping-dependent mobility, is presented for an assumed arbitrary impurity distribution in the channel. The values of transconductance and drain current obtained from the new relationships are found to deviate considerably from the theoretical values of these parameters estimated from the existing relationships.
  • Keywords
    electron mobility; field effect transistors; semiconductor doping; arbitrary impurity distribution; doping dependence electron mobility; drain current; junction field effect transistor; semiconductor doping; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710150
  • Filename
    4235233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=913608