DocumentCode
913683
Title
X-band silicon TRAPATT diodes
Author
Ying, R.S.
Volume
58
Issue
8
fYear
1970
Firstpage
1285
Lastpage
1286
Abstract
Pulsed TRAPATT diodes have been successfully operated in X-band with 20 percent efficiency and 15 W output power. The diodes operate at the first subharmonic of the IMPATT frequency. Similar diodes have yielded 35 percent efficiency at 5.3 GHz as oscillators, and 54 percent efficiency at 3 GHz as RF triggered amplifiers.
Keywords
Circuit testing; Coaxial components; Diodes; Doping profiles; Heat sinks; Oscillators; Power generation; Radio frequency; Silicon; Solid state circuits;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1970.7907
Filename
1449837
Link To Document