DocumentCode
913942
Title
Millimeter IMPATT Sources for the 130-170-GHz Range
Author
Weller, Kenneth P. ; Ying, Robert S. ; Lee, Don H.
Volume
24
Issue
11
fYear
1976
fDate
11/1/1976 12:00:00 AM
Firstpage
738
Lastpage
743
Abstract
Device and circuit design of silicon IMPATT sources in the 130-170-GHz range is discussed. A 170-GHz source has been developed with 16 mW at the isolator output having an AM double-side-band noise-to-signal ratio of -115 dB per 1 kHz beyond 70 kHz from carrier.
Keywords
Aerospace electronics; Copper; Current density; Doping profiles; Fabrication; Light emitting diodes; Millimeter wave devices; Silicon; Substrates; Temperature;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1976.1128954
Filename
1128954
Link To Document