High-frequency performance of separate absorption grading, charge, and multiplication InP/InGaAs avalanche photodiodes

Author

Tarof, L.E. ; Yu, J. ; Bruce, R. ; Knight, D.G. ; Baird, T. ; Oosterbrink, B.

Author_Institution

Bell-Northern Res. Ltd., Ottawa, Ont., Canada

Volume

5

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

672

Lastpage

674

Abstract

Planar separate absorption, grading, charge, and multiplication avalanche photodiodes that were fabricated on whole wafers are discussed. The high-frequency performance was investigated over a range of integrated charge (2.4-3.4*10/sup 12/ cm/sup -2/) and high field InP thickness (0.2-0.4 mu m). The bandwidth vs. gain dependence, gain-bandwidth product, minimum gain for useful bandwidth, and breakdown voltage are strongly correlated with the integrated charge and weakly correlated with the high field InP thickness. A very high gain-bandwidth product of 122 GHz was found. These observations are explained theoretically by considering ionization in the InGaAs.<>

Keywords

avalanche photodiodes; gallium arsenide; indium compounds; 0.2 to 0.4 micron; 122 GHz; HF; InP thickness; InP-InGaAs; absorption photodiodes; bandwidth dependence; breakdown voltage; charge photodiodes; gain dependence; gain-bandwidth product; grading photodiodes; high field; high-frequency; integrated charge; ionization; minimum gain; multiplication avalanche photodiodes; semiconductors; whole wafers; Absorption; Avalanche photodiodes; Bandwidth; Fabrication; Indium gallium arsenide; Indium phosphide; Optical fibers; Optimized production technology; Pulse amplifiers; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.219706

Filename

219706