• DocumentCode
    914078
  • Title

    Radiation effect on MOS/LSI

  • Author

    Wei-Hau Wu

  • Volume
    58
  • Issue
    9
  • fYear
    1970
  • Firstpage
    1382
  • Lastpage
    1383
  • Abstract
    The performance of Fairchild 3530 metal-oxide semiconductor/large-scale integration (MOS/LSI) integrated circuits was studied in a Co-60 radiation environment. The experimental results obtained indicate that the maximum gamma dose for this device is 5.6×104rad. These data can serve as a reference for using MOS/LSI in military or space system applications.
  • Keywords
    Apertures; Attenuators; Boring; Gain measurement; Large scale integration; Laser beams; Monitoring; Near-field radiation pattern; Oscillators; Radiation effects;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1970.7946
  • Filename
    1449876
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=914078