DocumentCode
914174
Title
Delay time in GaAs high-power high-speed photoconductive switching devices
Author
Zu, L.Q. ; Lu, Y. ; Shen, H. ; Dutta, M.
Author_Institution
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Volume
5
Issue
6
fYear
1993
fDate
6/1/1993 12:00:00 AM
Firstpage
710
Lastpage
712
Abstract
The delay time between the beginning of optical illumination and the onset of switching in the transient response of semi-insulating GaAs high-power high-speed photoconductive switching devices is discussed. The field- and laser-energy-dependent optical absorption coefficient is used to explain the experimentally observed open-state-field, and laser-energy-dependent delay time. Calculations are shown to agree with the experimental results.<>
Keywords
III-V semiconductors; gallium arsenide; optical switches; photoconducting devices; semiconductor switches; GaAs; delay time; field dependence; high-power; high-speed; laser-energy-dependent; open-state-field; optical absorption coefficient; optical illumination; photoconductive switching devices; semi-insulating; transient response; Absorption; Delay effects; Electron traps; Gallium arsenide; Laser modes; Laser radar; Laser theory; Photoconducting devices; Photoconductivity; Power semiconductor switches;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.219719
Filename
219719
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