• DocumentCode
    914640
  • Title

    Computer Simulation of Impurity Diffusion in Semiconductors by the Monte Carlo Method

  • Author

    Akiyama, Akira ; Hosoi, Takashi ; Ishihara, Ichiro ; Matsumoto, Satoru ; Niimi, Tatsuya

  • Author_Institution
    IBM Japan, Yamato Laboratory, Japan
  • Volume
    6
  • Issue
    2
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    185
  • Lastpage
    189
  • Abstract
    A methodology of impurity diffusion in semiconductors by the Monte Carlo method has been presented. The simulation is carried out by repeating the motion of both vacancies and self-interstitials with the complementary weighting factor for the jumps of respective point defects. This method is applied to impurity diffusion from a limited source in a virtual semiconductor crystal and its validity is confirmed.
  • Keywords
    Annealing; Computational modeling; Computer simulation; Conductors; Crystalline materials; Equations; Helium; Lattices; Semiconductor impurities; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.1987.1270262
  • Filename
    1270262
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=914640