Double and triple charge pump for power IC: dynamic models which take parasitic effects into account

Author

Cataldo, G.D. ; Palumbo, Gaetano

Author_Institution

Dipartimento Elettrico, Elettronico e Sistemistico, Catania Univ., Italy

Volume

40

Issue

2

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

92

Lastpage

101

Abstract

An optimized design methodology for the double and triple charge pump is proposed. The circuits discussed given an output voltage greater than the supply voltage and are commonly used to power 1C or memory to allow the switching on of an MOS device. Theoretical models of charge pumps in the transient region are given. The models take parasitic capacitances and current leakage into account. They allow better knowledge of the circuit dynamics to be obtained and an optimized design to be achieved

Keywords

MOS integrated circuits; leakage currents; network analysis; power integrated circuits; transient response; voltage multipliers; MOS device; circuit dynamics; current leakage; dynamic models; memory; optimized design methodology; parasitic capacitances; parasitic effects; power IC; transient region; triple charge pump; Charge pumps; Design methodology; Design optimization; Helium; Integrated circuit modeling; MOS capacitors; MOS devices; Parasitic capacitance; Power integrated circuits; Voltage;

fLanguage

English

Journal_Title

Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on

Publisher

ieee

ISSN

1057-7122

Type

jour

DOI

10.1109/81.219823

Filename

219823