Schottky contact effects in the sidegating effect of GaAs devices

Author

Liu, Yi ; Dutton, Robert W. ; Deal, Michael D.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

13

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

149

Lastpage

151

Abstract

The sidegating effect measurements on ungated FETs verify that the Schottky contact on undoped substrates causes serious current reduction in GaAs devices and high leakage current in the semi-insulating GaAs. By realizing the fact that current in Schottky-i-n structures can be high and taking this effect into account, the observed abrupt changes and S-shaped characteristics of the drain and sidegate currents can be explained to be the consequence of the transition of the substrate current from the n-i-n current to the Schottky-i-n current.<>

Keywords

III-V semiconductors; Schottky effect; Schottky gate field effect transistors; gallium arsenide; leakage currents; semiconductor device testing; GaAs devices; MESFET; S-shaped characteristics; Schottky contact effects; Schottky-i-n current; current reduction; drain current; high leakage current; n-i-n current; sidegate currents; sidegating effect; substrate current; undoped substrates; ungated FETs; Current measurement; FETs; Gallium arsenide; Gold; Leakage current; MESFETs; Schottky barriers; Substrates; Testing; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.144993

Filename

144993