• DocumentCode
    915651
  • Title

    Lifetime limited ultrafast response of metal-semiconductor-metal photodetectors on InGaAs/GaAs-on-GaAs superlattices

  • Author

    Hugi, J. ; Dupuy, C. ; Sachot, R. ; Ilegems, M.

  • Author_Institution
    Ecole Polytech. Federale de Lausanne, Switzerland
  • Volume
    29
  • Issue
    12
  • fYear
    1993
  • fDate
    6/10/1993 12:00:00 AM
  • Firstpage
    1130
  • Lastpage
    1131
  • Abstract
    The lifetime limited ultrafast response (FWHM=3.3 ps) of metal-semiconductor-metal photodetectors on InGaAs/GaAs-on-GaAs superlattices has been measured by electro-optic sampling. These detectors operate in the 1.3-1.55 mu m wavelength region and show a bias dependent responsivity.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; semiconductor superlattices; 1.3 to 1.55 micron; GaAs substrate; InGaAs-GaAs; bias dependent responsivity; electro-optic sampling; lifetime limited ultrafast response; metal-semiconductor-metal photodetectors; superlattices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930754
  • Filename
    220850