ESD: a pervasive reliability concern for IC technologies

Author

Duvvury, Charvaka ; Amerasekera, Ajith

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

81

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

690

Lastpage

702

Abstract

Several aspects of ESD are described from the point of view of the test, design, product, and reliability engineering. A review of the ESD phenomena along with the test methods, the appropriate on-chip protection techniques, and the impact of process technology advances from CMOS to BiCMOS on the ESD sensitivity of IC protection circuits are presented. The status of understanding in the field of ESD failure physics and the current approaches for modeling are discussed

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; MOS integrated circuits; circuit reliability; electrostatic discharge; failure analysis; integrated circuit technology; integrated circuit testing; protection; reviews; semiconductor device models; BiCMOS; CMOS; ESD failure physics; ESD sensitivity; IC protection circuits; IC technologies; modeling; monolithic IC; on-chip protection; process technology; reliability engineering; review; test methods; Appropriate technology; BiCMOS integrated circuits; CMOS process; CMOS technology; Circuit testing; Electrostatic discharge; Integrated circuit testing; Product design; Protection; Reliability engineering;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.220901

Filename

220901