• DocumentCode
    916432
  • Title

    Explicit formulas for GaAs f.e.t. amplifier interstage matching networks

  • Author

    Dao, T.H. ; Ha, T.T.

  • Author_Institution
    RCA Mobile Communication Systems, Meadow Lands, USA
  • Volume
    128
  • Issue
    1
  • fYear
    1981
  • fDate
    2/1/1981 12:00:00 AM
  • Firstpage
    25
  • Lastpage
    31
  • Abstract
    Explict formulas for gain-bandwidth limitations and element values of the Chebyshev and Butterworth bandpass matching networks of two GaAs f.e.t.s in direct cascade are derived. Procedure for gain rolloff compensation using closed-form expressions is also presented. The technique is simple and can be used by nonspecialists without considerable effort.
  • Keywords
    III-V semiconductors; gallium arsenide; microwave amplifiers; solid-state microwave circuits; Butterworth; Chebyshev; GaAs FET amplifier; bandpass matching networks; closed-form expressions; element values; gain rolloff compensation; gain-bandwidth limitations; interstage matching networks;
  • fLanguage
    English
  • Journal_Title
    Electronic Circuits and Systems, IEE Proceedings G
  • Publisher
    iet
  • ISSN
    0143-7089
  • Type

    jour

  • DOI
    10.1049/ip-g-1:19810005
  • Filename
    4644830