High-quality MOSFETs with ultrathin LPCVD gate SiO/sub 2/

Author

Ahn, J. ; Ting, W. ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

13

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

186

Lastpage

188

Abstract

MOSFETs and MOS capacitors with ultrathin (65 AA) low-pressure chemical vapor deposition (LPCVD) gate SiO/sub 2/ have been fabricated and compared to those with thermal SiO/sub 2/ of identical thickness. Results show that the devices with LPCVD SiO/sub 2/ have higher transconductance and current drivability, better channel hot-carrier immunity, lower defect density, and better time-dependent dielectric breakdown (TDDB) characteristics than devices with conventional thermal SiO/sub 2/.<>

Keywords

CVD coatings; dielectric thin films; electric breakdown of solids; hot carriers; insulated gate field effect transistors; metal-insulator-semiconductor devices; silicon compounds; 65 AA; MOS capacitors; MOSFETs; Si-SiO/sub 2/; TDDB characteristics; channel hot-carrier immunity; current drivability; defect density; low-pressure chemical vapor deposition; time-dependent dielectric breakdown; transconductance; ultrathin LPCVD gate oxide; Annealing; Dielectric substrates; Electric breakdown; Hot carriers; MOS capacitors; MOSFETs; Silicon; Thermal stresses; Thickness control; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145015

Filename

145015