Wide-Band Steady-State Numerical Model and Parameter Extraction of a Tensile-Strained Bulk Semiconductor Optical Amplifier

Author

Connelly, Michael J.

Author_Institution

Dept. of Electron. & Comput. Eng., Limerick Univ.

Volume

43

Issue

1

fYear

2007

Firstpage

47

Lastpage

56

Abstract

A wide-band steady-state model of a tensile-strained bulk InGaAsP semiconductor optical amplifier is described. An efficient numerical algorithm of the steady-state model and a parameter extraction algorithm based on the Levenberg-Marquardt method are described. The parameter extraction technique is used to determine the material Auger recombination coefficient, effective intraband lifetime, the average strain and molar fraction of Arsenic in the active region. Simulations and comparisons with experiment are given which demonstrate the accuracy and versatility of the model

Keywords

Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; semiconductor optical amplifiers; Auger recombination coefficient; InGaAsP; InGaAsP semiconductor optical amplifier; Levenberg-Marquardt method; effective intraband lifetime; parameter extraction; tensile-strained bulk material; wide-band steady-state numerical model; Numerical models; Optical materials; Optical waveguides; Parameter extraction; Photonic band gap; Semiconductor materials; Semiconductor optical amplifiers; Steady-state; Tellurium; Tensile strain; Modeling; parameter extraction; semiconductor optical amplifier; tensile-strained bulk material;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2006.885205

Filename

4049852