High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors

Author

Li, X. ; Longenbach, K.F. ; Wang, Y. ; Wang, Wen I.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

13

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

192

Lastpage

194

Abstract

InAs channel field-effect transistors of 1- mu m gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs.<>

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; impact ionisation; indium compounds; 1 micron; 33 mS; 414 mS; AlSbAs-InAs; channel electric fields; gate length; high breakdown voltage; impact ionization threshold; molecular beam epitaxy; n-channel field-effect transistors; output conductances; room-temperature operation; transconductances; voltage gains; Breakdown voltage; Buffer layers; FETs; Gallium arsenide; Impact ionization; Indium phosphide; Molecular beam epitaxial growth; Satellites; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145017

Filename

145017