• DocumentCode
    918029
  • Title

    X band n+-p-p+ IMPATT diodes

  • Author

    Ying, R.S.

  • Author_Institution
    Hughes Research Laboratories, Torrance, USA
  • Volume
    8
  • Issue
    12
  • fYear
    1972
  • Firstpage
    297
  • Lastpage
    298
  • Abstract
    Silicon IMPATT diodes, utilising holes as the drifting carrier, have been fabricated. An output power of 0.5 W with 12% efficiency at X band was obtained.
  • Keywords
    IMPATT diodes; microwave oscillators; IMPATT diodes; X band; n+-p-p+; silicon;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720219
  • Filename
    4235673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=918029