• DocumentCode
    918759
  • Title

    Elimination of Forming Process for TiOx Nonvolatile Memory Devices

  • Author

    Wang, Wei ; Fujita, Shinobu ; Wong, S. Simon

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA
  • Volume
    30
  • Issue
    7
  • fYear
    2009
  • fDate
    7/1/2009 12:00:00 AM
  • Firstpage
    763
  • Lastpage
    765
  • Abstract
    This letter studies the physical mechanism for the high-voltage forming process that is required before a TiOx resistance-change memory device can be set and reset repeatedly. A new in situ fabrication process has been developed and demonstrated to eliminate the high-voltage forming.
  • Keywords
    random-access storage; titanium compounds; TiO; high-voltage forming process; nonvolatile memory devices; physical mechanism; resistance-change memory device; Forming; in situ fabrication; nonvolatile memory (NVM); titanium oxide;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2021003
  • Filename
    4982703
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=918759