DocumentCode
919046
Title
Stability and switching in overcritically doped Gunn diodes
Author
Thim, H.
Volume
59
Issue
8
fYear
1971
Firstpage
1285
Lastpage
1286
Abstract
It is shown theoretically that Gunn diodes with arbitrarily high nL products arestable under constant voltage condition if the doping is sufficiently high, the doping fluctuations do not exceed a critical value of about 10 percent, and the high field branch of the V/E characteristic is not rising steepty. The device can be used as a sub-nanosecond switching element.
Keywords
Diodes; Doping; Electrons; Ferroelectric materials; Gunn devices; Optical bistability; Optical films; Stability; Titanium compounds; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1971.8399
Filename
1450329
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