Effect of source extension junction depth and substrate doping concentration on I-MOS device characteristics

Author

Choi, Woo Young ; Song, Jae Young ; Lee, Jong Duk ; Park, Byung-Gook

Author_Institution

Sch. of Electr. Eng., Inter-Univ. Semicond. Res. Center, Seoul, South Korea

Volume

53

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

1282

Lastpage

1285

Abstract

Some device design issues of the impact-ionization MOS (I-MOS) device are discussed in terms of the junction depth of the source extension region and the substrate doping concentration. It is found that the source extension region is needed to be as shallow as possible in order to minimize the avalanche breakdown voltage. Furthermore, it is observed that the dependence of the threshold voltage of the I-MOS device on the substrate doping concentration is contrary to that of the MOSFET, which is an interesting phenomenon. It is related to the junction abruptness between the channel and the i-region, which is explained by using the concept of maximum lateral electric field.

Keywords

MIS devices; avalanche breakdown; impact ionisation; semiconductor doping; I-MOS device characteristics; MOSFET devices; avalanche breakdown voltage; impact-ionization MOS; junction depth; lateral electric field; substrate doping concentration; Avalanche breakdown; Breakdown voltage; Doping; Impact ionization; MOSFET circuits; PIN photodiodes; Substrates; Temperature dependence; Threshold voltage; Voltage control; Avalanche breakdown voltage; design; impact-ionization MOS (I-MOS) device; junction depth; maximum lateral electric field; substrate doping concentration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.872097

Filename

1624717