Interaction at 4.85 GHz between drifted current carriers and n-InSb

The interaction between an applied microwave field at 4.85 GHz and a conical sample of n-InSb at 77°K used as a microwave circuit element is described. The principal interaction is found only when the cone axis contains the 〈111〉 crystal axis. The maximum interaction is found when the applied microwave electric field, a steady magnetic field, and an applied current pulse are in the same direction, namely, along the axis of the conical sample.