• DocumentCode
    920292
  • Title

    Effect of contact resistance on Gunn-diode risetimes

  • Author

    Edwards, D. ; Kellett, G. ; Turner, P. ; Myers, F.

  • Author_Institution
    Plessey Co., Allen Clark Research Centre, Towcester, UK
  • Volume
    8
  • Issue
    24
  • fYear
    1972
  • Firstpage
    596
  • Lastpage
    597
  • Abstract
    It is shown that the dominant mechanism limiting the risetime of pulsed Gunn-effect oscillators is a parasitic resistance within the device. If this resistance is reduced by careful control of the contact metallisation, or alternatively by the use of n+ contacts, risetimes of 1 ns or less can be obtained. The cavity parameters are shown to have a 2nd-order effect only.
  • Keywords
    Gunn diodes; Gunn oscillators; contact resistance; delays; Gunn diode risetimes; contact resistance effects;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720432
  • Filename
    4235898
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=920292