89-GHz f/sub T/ room-temperature silicon MOSFETs

Author

Yan, Ran-Hong ; Lee, Kwing F. ; Jeon, Duk Y. ; Kim, Y.O. ; Park, B.G. ; Pinto, M.R. ; Rafferty, Conor S. ; Tennant, D.M. ; Westerwick, E.H. ; Chin, G.M. ; Morris, M.D. ; Early, K. ; Mulgrew, P. ; Mansfield, W.M. ; Watts, R.K. ; Voshchenkov, Alexander M. ;

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

13

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

256

Lastpage

258

Abstract

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f/sub T/) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 AA, and a channel length of 0.15 mu m. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region.<>

Keywords

elemental semiconductors; insulated gate field effect transistors; silicon; solid-state microwave devices; 0.15 micron; 1 V; 1.5 V; 1.8 ps; 40 AA; 89 GHz; MOSFETs; Si; channel length; deep submicron devices; drain-to-source bias; electron beam defined gates; fabrication procedure; gate oxide thickness; gate-to-source bias; intrinsic transit time; room temperature; unity-current-gain cutoff frequency; Annealing; Electric resistance; Electrical resistance measurement; Lithography; MOSFETs; Silicon; Temperature measurement; Thickness measurement; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145045

Filename

145045