High-speed, low-threshold InGaAsP semi-insulating buried crescent lasers with 22 GHz bandwidth

Author

Huang, Rong-Ting ; Wolf, David ; Cheng, Wood-Hi ; Jiang, Ching-Long ; Agarwal, Rajiv ; Renner, Daniel ; Mar, Alan ; Bowers, John E.

Author_Institution

Rockwell Int. Corp., Newbury Park, CA, USA

Volume

4

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

293

Lastpage

295

Abstract

The authors have fabricated high-speed, low-threshold 1.3 mu m InGaAsP semi-insulating buried crescent lasers with a CW 3 dB modulation bandwidth of 22 GHz and a threshold current as low as 6.5 mA at room temperature. This is the highest 3 dB modulation bandwidth ever reported for the planar-type semiconductor laser. These results were achieved by implementing a submicron photolithographic process in the channel etching to reduce the cavity width and a polyimide dielectric layer under the bonding pad area to minimize the electrical parasitics.<>

Keywords

III-V semiconductors; etching; gallium arsenide; gallium compounds; indium compounds; optical modulation; photolithography; semiconductor junction lasers; semiconductor technology; 1.3 micron; 22 GHz; 6.5 mA; CW lasing; IR sources; InGaAsP; bonding pad; cavity width; channel etching; electrical parasitics; high speed lasers; low-threshold; modulation bandwidth; planar-type semiconductor laser; polyimide dielectric layer; room temperature; semi-insulating buried crescent lasers; submicron photolithographic process; threshold current; Bandwidth; Dielectrics; Etching; Fiber lasers; Indium phosphide; Laser radar; Masers; Semiconductor laser arrays; Temperature; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.127191

Filename

127191