Strained InGaAs/GaAs quantum well constricted-mesa lasers and application in a vertical-twin-guide tunable laser

Author

Chuang, Z.M. ; Scott, J.W. ; Young, D.B. ; Coldren, L.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

4

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

315

Lastpage

318

Abstract

Constricted-mesa semiconductor lasers containing a strained-layer InGaAs single-quantum-well-separate-confinement-heterostructure have been demonstrated. Very high etching selectivity between Al/sub x/Ga/sub 1-x/As (x=0.9) and Al/sub x/Ga/sub 1-x/As (x=<0.6) was achieved using diluted hydrofluoric acid to create a deeply undercut current confinement region, which enables a side contact for current injection. A process combining a self-aligned reactive ion etch and the undercut wet chemical etch has been developed for implementing a vertical twin-guide three-electrode tunable laser structure. Low-threshold currents for both single-guide devices with centered top contacts (5.2 mA) and twin-guide ones with side contacts (6.5 mA) were obtained.<>

Keywords

III-V semiconductors; etching; gallium arsenide; indium compounds; laser tuning; optical waveguides; optical workshop techniques; semiconductor junction lasers; semiconductor technology; sputter etching; 5.2 mA; 6.5 mA; InGaAs-GaAs; centered top contacts; current injection; deeply undercut current confinement region; diluted hydrofluoric acid; high etching selectivity; low threshold currents; quantum well constricted-mesa lasers; self-aligned reactive ion etch; semiconductor lasers; side contact; single-guide devices; single-quantum-well-separate-confinement-heterostructure; strained-layer; undercut wet chemical etch; vertical twin-guide three-electrode tunable laser structure; Chemical lasers; Gallium arsenide; Indium gallium arsenide; Laser applications; Laser tuning; Optical waveguides; Quantum well lasers; Semiconductor lasers; Tunable circuits and devices; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.127198

Filename

127198