• DocumentCode
    920727
  • Title

    Noise performance of gallium-arsenide and indium-phosphide injection-limited diodes

  • Author

    Källbäck, B.

  • Author_Institution
    Microwave Institute Foundation, Stockholm, Sweden
  • Volume
    9
  • Issue
    1
  • fYear
    1973
  • Firstpage
    11
  • Lastpage
    12
  • Abstract
    Noise factors of gallium-arsenide and indium-phosphide injection-limited diodes have been calculated. The results show that it is generally preferable to bias the diodes to fields higher than the maximum-negative-mobility region if the appropriate boundary condition at the cathode can be maintained.
  • Keywords
    noise; semiconductor diodes; boundary condition; diffusion coefficients; gallium arsenide; noise; semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730008
  • Filename
    4235942
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=920727