• DocumentCode
    921117
  • Title

    Computer optimisation of double-drift-region IMPATT diodes

  • Author

    Lekholm, Anders ; Mayr, Josef

  • Author_Institution
    Microwave Institute Foundation, Stockholm, Sweden
  • Volume
    9
  • Issue
    3
  • fYear
    1973
  • Firstpage
    64
  • Lastpage
    66
  • Abstract
    Design parameters for double-drift-region silicon IMPATT diodes for frequencies from 10 to 100 GHz are presented. The design is based on extensive large-signal computer simulations at one frequency of two different diode structures in a simple circuit. From these simulations, a simple design criterion was derived which permits the calculation of optimised impurity profiles for any desired frequency, with a small computer effort.
  • Keywords
    IMPATT diodes; computer-aided design; electronics applications of computers; optimisation; semiconductor doping; simulation; solid-state microwave devices; 10 to 100 GHZ; IMPATT diodes; Si; computer aided design; design criterion; double drift region; electronics applications of computers; optimisation; semiconductor doping; simulations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730046
  • Filename
    4235982
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=921117