• DocumentCode
    922504
  • Title

    Comment on Metal-nitride--oxide--silicon avalanche-injection memory

  • Author

    Mellor, P.J.T. ; Dunn, P.J.

  • Author_Institution
    Post Office, Research Department, London, UK
  • Volume
    9
  • Issue
    11
  • fYear
    1973
  • Firstpage
    252
  • Lastpage
    253
  • Keywords
    electron avalanches; metal-insulator-semiconductor devices; semiconductor storage devices; MNOS transistors; capacitance/voltage plots; junction avalanche; semiconductor memory; shift; threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730182
  • Filename
    4236125