Hot carrier evaluation of MOSFETs in ULSI circuits using the photon emission method

Author

Uraoka, Yukiharu ; Tsutsu, Noriko ; Morii, Tomoyuki ; Tsuji, Kazuhiro

Author_Institution

Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

40

Issue

8

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

1426

Lastpage

1431

Abstract

Photon emission from MOSFETs by hot carrier effect under AC operation is studied. A method to estimate the lifetime of MOSFETs in LSI chips, which uses the photon emission, is proposed. This method is based on experimental data showing that the lifetime of hot-carrier degradation is described by a universal curve with respect to the photon count at a wavelength of 200 nm. Quantitative estimations of lifetimes of MOSFETs in a real LSI are reported. This method is applied to the lifetime estimation of a CMOS microprocessor

Keywords

CMOS integrated circuits; VLSI; hot carriers; insulated gate field effect transistors; integrated circuit testing; photon counting; AC operation; CMOS microprocessor; MOSFETs; ULSI circuits; hot carrier effect; lifetime; photon count; photon emission method; universal curve; Circuits; Degradation; Hot carrier effects; Hot carriers; Large scale integration; Life estimation; Lifetime estimation; MOSFETs; Microprocessors; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.223701

Filename

223701